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Transistor active region
Transistor active region





The Electrical Engineering (EE) exam syllabus. The Question and answers have been prepared Can you explain this answer? for Electrical Engineering (EE) 2023 is part of Electrical Engineering (EE) preparation.

transistor active region

Which of the following is true for the active region of an npn transistor?a)The collector current is directly proportional to the base currentb)The potential difference between the emitter and the collector is less than 0.4 Vc)All of the mentionedd)None of the mentionedCorrect answer is option 'C'. Therefore, the correct option is (c) All of the mentioned, as both statements about collector current and emitter-collector potential difference are true for the active region of an NPN transistor. The potential difference between the emitter and the collector is the sum of the potential drops across the base-emitter and collector-base junctions. This is because the collector-base junction is reverse biased, which causes a depletion region to form. In the active region, the potential difference between the emitter and the collector is greater than 0.4 V. The ratio of the collector current to the base current is known as the current gain or beta (β) of the transistor. This means that as the base current increases, the collector current also increases.

transistor active region

In the active region, the collector current is directly proportional to the base current. In this region, the transistor is biased such that the base-emitter junction is forward biased and the collector-base junction is reverse biased. The active region of an NPN transistor is the region in which it operates as an amplifier.







Transistor active region